| PART |
Description |
Maker |
| CY7C1525V18-200BZC CY7C1525V18-250BZC CY7C1514V18 |
72-Mbit QDR-IISRAM 2-Word Burst Architecture 8M X 9 QDR SRAM, 0.45 ns, PBGA165
72-Mbit QDR-IISRAM 2-Word Burst Architecture 72兆位QDR - II型⑩SRAM2字突发结
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1292DV18-200BZXC CY7C1292DV18-167BZXC CY7C1294 |
9-Mbit QDR- IISRAM 2-Word Burst Architecture 512K X 18 QDR SRAM, 0.45 ns, PBGA165
9-Mbit QDR- IISRAM 2-Word Burst Architecture 512K X 18 QDR SRAM, 0.5 ns, PBGA165
9-Mbit QDR- IISRAM 2-Word Burst Architecture 256K X 36 QDR SRAM, 0.5 ns, PBGA165
9-Mbit QDR- IISRAM 2-Word Burst Architecture 256K X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1310CV18-167BZC CY7C1310CV18-167BZI CY7C1314CV |
18-Mbit QDR-II垄芒 SRAM 2-Word Burst Architecture
18-Mbit QDR-II SRAM 2-Word Burst Architecture
18-Mbit QDR-II?/a> SRAM 2-Word Burst Architecture
18-Mbit QDR-II?SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1410BV18-167BZI CY7C1410BV18-167BZXI CY7C1425B |
36-Mbit QDR-II垄芒 SRAM 2-Word Burst Architecture
36-Mbit QDR-II SRAM 2-Word Burst Architecture
36-Mbit QDR-II?/a> SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1165V18 CY7C1163V18 CY7C1161V18 CY7C1176V18 CY |
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18兆位的国防评估报告⑩- II SRAM字突发架构（2.5周期读写延迟
18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1911BV18-278BZXC CY7C1911BV18-278BZXI CY7C1911 |
18-Mbit QDRII SRAM 4-Word Burst Architecture 2M X 9 QDR SRAM, 0.45 ns, PBGA165
18-Mbit QDRII SRAM 4-Word Burst Architecture 2M X 8 QDR SRAM, 0.45 ns, PBGA165
18-Mbit QDRII SRAM 4-Word Burst Architecture 1M X 18 QDR SRAM, 0.45 ns, PBGA165
18-Mbit QDRII SRAM 4-Word Burst Architecture 512K X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| R1Q3A3618 R1Q3A3636 R1Q3A3609 R1Q3A3609ABG-60R R1Q |
36-Mbit QDR™II SRAM 4-word Burst
36-Mbit QDR™II SRAM 4-word Burst
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| CY7C1511V18-250BZXC CY7C1511V18-250BZI CY7C1511V18 |
72-Mbit QDR II SRAM 4-Word Burst Architecture 8M X 9 QDR SRAM, 0.45 ns, PBGA165
72-Mbit QDR II SRAM 4-Word Burst Architecture 4M X 18 QDR SRAM, 0.5 ns, PBGA165
72-Mbit QDR II SRAM 4-Word Burst Architecture 4M X 18 QDR SRAM, 0.45 ns, PBGA165
72-Mbit QDR II SRAM 4-Word Burst Architecture 2M X 36 QDR SRAM, 0.45 ns, PBGA165
72-Mbit QDR II SRAM 4-Word Burst Architecture 8M X 8 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| HM66AQB18204BP-33 HM66AQB36104BP-40 HM66AQB9404BP- |
Memory>Fast SRAM>QDR SRAM
36-Mbit QDRTMII SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| CY7C1511V18-250BZC CY7C1511V18-167BZC |
72-Mbit QDRII SRAM 4-Word Burst Architecture 8M X 8 QDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1141V18 CY7C1145V18 CY7C1156V18 CY7C1143V18 CY |
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
|
